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Product Detailed Parameters
- Description：MOSFET N-CH 250V 7.8A TO-252
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：250 V
- Current - Continuous Drain (Id) @ 25°C：7.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5.5V, 10V
- Rds On (Max) @ Id, Vgs：550mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：8 nC @ 5.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：846 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：50W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
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Overview
The AM8N25-550D is an N-channel MOSFET manufactured by Analog Power Inc., designed for surface-mount applications in the TO-252 (DPAK) package. It features a maximum drain-source voltage of 250 V and a continuous drain current of 7.8 A at case temperature. The device offers a typical on-resistance of 550 mΩ, ensuring efficient power handling with a total power dissipation rating of 50 W under specified thermal conditions.
Feature Summary
- High-voltage capability suitable for demanding power switching environments
- Surface-mount construction optimized for automated assembly processes
- Low on-resistance characteristics to minimize conduction losses
Applications
- DC-DC converter circuits
- Power management modules
- Motor control systems
Procurement Notes
Verify the manufacturer part number against official Analog Power Inc. documentation to ensure authenticity. Confirm that the TO-252 package dimensions match your PCB footprint requirements. Check for specific ordering suffixes if available in the datasheet, as these may indicate tape-and-reel packaging or specific testing criteria required for your production line.
Selection Notes
Select this component when a 250 V breakdown voltage is required alongside moderate current handling capabilities. The TO-252 package provides a balance between thermal performance and board space efficiency. Ensure your design accounts for the 50 W power dissipation limit by implementing adequate heatsinking or copper pour areas to maintain junction temperatures within safe operating limits during continuous operation.
Part Context
This component belongs to the single N-channel MOSFET category from Analog Power Inc. It is engineered for general-purpose power switching tasks where high voltage isolation is critical. The device complements other offerings in the manufacturer's portfolio by providing robust performance in compact surface-mount form factors for industrial and consumer electronics.
Replacement Considerations
Consult official distributor databases for cross-reference equivalents. Verify that any substitute maintains identical pinout configurations and meets or exceeds the 250 V and 7.8 A specifications. Ensure thermal resistance values are compatible with existing cooling solutions.
