AM90N03-03P

$0.62

Description：MOSFET P-CH 30V 90A TO-220
Series：-
Mfr：Analog Power Inc.
Package：Bulk

SKU:b9400a37fe06 Category: Single FETs, MOSFETs Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 90A TO-220
Series：-
Mfr：Analog Power Inc.
Package：Bulk
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.5mOhm @ 45A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs：36 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6725 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：300W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220
Package / Case：TO-220-2

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AM90N03-03P

Overview

The AM90N03-03P is a single N-channel silicon MOSFET manufactured by Analog Power Inc. It features a drain-source voltage (VDS) rating of 30 V and a continuous drain current (ID) of 90 A at case temperature. The device exhibits a low on-resistance (RDS(on)) of 3.5 mΩ at VGS = 10 V, achieved through low RDS(on) trench technology. Packaged in a TO-220 through-hole format, it supports a power dissipation of 300 W at case temperature.

Feature Summary

Low thermal impedance design for efficient heat transfer
Fast switching speed capabilities
Low RDS(on) trench technology implementation

Applications

High side switching
Power regulation circuits
Inrush limiting applications

Procurement Notes

Verify the specific ordering suffix to ensure the correct package variant matches your assembly requirements. Confirm that the manufacturer designation remains Analog Power Inc. when sourcing replacements or validating component authenticity against official datasheets.

Selection Notes

Select this component for applications requiring high current handling at low voltage levels. The 30 V rating and 90 A capacity suit DC-DC converters and motor drivers where low conduction losses are critical. Ensure adequate heatsinking is provided to manage the 300 W thermal dissipation capability effectively.

Part Context

This part belongs to the Analog Power N-channel MOSFET family, designed for general-purpose power switching. It utilizes trench gate technology to minimize resistance while maintaining robust switching performance. The TO-220 package facilitates manual soldering and board-level thermal management.

Replacement Considerations

Cross-reference with other 30 V, 90 A N-channel MOSFETs in TO-220 packages. Verify pinout compatibility and ensure equivalent RDS(on) and thermal characteristics before substitution.