AM90N06-04D

$0.64

Description：MOSFET N-CH 60V 83A TO-252
Series：-
Mfr：Analog Power Inc.
Package：Bulk

SKU:657af37abeed Category: Single FETs, MOSFETs Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 83A TO-252
Series：-
Mfr：Analog Power Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：83A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4.8mOhm @ 45A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：64 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：11698 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：50W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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AM90N06-04D

Overview

The AM90N06-04D is a single N-channel power MOSFET with a 60V drain-source voltage rating and an 83A continuous drain current capacity at 25°C. It features a maximum on-state resistance of 4.8mΩ at VGS=10V and 5.8mΩ at VGS=4.5V. The device supports a pulsed drain current of 300A and dissipates up to 50W of power. Thermal performance includes a junction-to-case resistance of 3°C/W and a junction-to-ambient resistance of 40°C/W. Operating temperatures range from -55°C to 175°C.

Feature Summary

Utilizes low RDS(on) trench technology for efficient conduction.
Provides low thermal impedance for effective heat dissipation.
Supports fast switching speeds for high-frequency applications.

Applications

White LED boost converters
Automotive systems
Industrial DC/DC conversion circuits

Procurement Notes

Verify the specific datasheet revision, as the document is marked preliminary. Confirm that the TO-263 package dimensions match your PCB footprint requirements. Ensure gate drive voltages align with the specified thresholds for optimal on-resistance performance. Validate thermal management strategies against the provided junction-to-ambient resistance ratings.

Selection Notes

Select this component when a 60V N-channel MOSFET with high current handling is required. The low on-resistance makes it suitable for minimizing conduction losses in power stages. Consider the thermal resistance values when designing heatsinking or copper pour areas. Verify compatibility with the intended switching frequency regarding gate charge characteristics.

Part Context

This part belongs to Analog Power's lineup of N-channel enhancement mode field-effect transistors. These devices are engineered for general-purpose power switching applications requiring robust performance. The product line emphasizes efficiency through advanced trench gate architectures.

Replacement Considerations

Cross-reference pinouts and electrical limits before substitution. Verify that alternative components meet the 60V and 83A specifications. Check package compatibility to ensure physical interchangeability without PCB redesign.