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The AM90N06-10P is an N-Channel MOSFET with a 60V drain-source voltage rating. It supports a continuous drain current of 90A at case temperature and dissipates 120W of power under the same conditions. The device utilizes low RDS(on) trench technology to minimize conduction losses. Key electrical parameters include a gate-source threshold voltage ranging from 1V to 3.5V, tested at VDS = VGS and ID = 250 uA. It is housed in a TO-220 through-hole package.
Verify the specific manufacturer datasheet for the AM90N06-10P to confirm exact electrical tolerances and thermal characteristics. Ensure the TO-220 package dimensions match your PCB footprint requirements. Cross-reference the gate-source threshold voltage range with your driver circuit specifications to guarantee reliable turn-on and turn-off behavior under all operating conditions.
Select this component when a robust N-Channel MOSFET with high current handling capability is required for 60V applications. The TO-220 package facilitates easy mounting on heatsinks for thermal management. Consider the fast switching speed and low thermal impedance for designs prioritizing efficiency and compact thermal solutions in power sourcing equipment contexts.
This part belongs to Analog Power's N-Channel MOSFET lineup, designed for general power switching applications. The series emphasizes low on-resistance and thermal performance through trench technology. Similar parts in the family may offer different voltage ratings or package types, but share the core design philosophy of minimizing power loss and heat generation for efficient operation.
Check for direct substitutes with identical 60V rating, 90A current capacity, and TO-220 packaging. Verify that any replacement maintains comparable RDS(on) and thermal impedance values to ensure no degradation in system performance or thermal management capabilities.
The gate-source threshold voltage ranges from 1V to 3.5V under test conditions of VDS = VGS and ID = 250 uA.
The device is available in a TO-220 through-hole package.