AM90N08-10B

$0.34

Description：MOSFET N-CH 80V 90A TO-263
Series：-
Mfr：Analog Power Inc.
Package：Bulk

SKU:df4501edb944 Category: Single FETs, MOSFETs Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 80V 90A TO-263
Series：-
Mfr：Analog Power Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：13mOhm @ 44A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：60 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5052 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：300W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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AM90N08-10B

Overview

The Analog Power AM90N08-10B is an N-channel MOSFET featuring a drain-source voltage rating of 80 V and a gate-source voltage limit of ±20 V. It provides a continuous drain current of 90 A at 25°C case temperature, with a maximum power dissipation of 300 W under the same conditions. The device utilizes low on-resistance trench technology, achieving 11 mΩ at VGS = 10 V and 13 mΩ at VGS = 4.5 V. Thermal resistance ratings include 62.5 °C/W junction-to-ambient and 1 °C/W junction-to-case. Operating temperatures range from -55°C to +150°C.

Feature Summary

Low on-resistance trench technology for efficient conduction
Fast switching speed capabilities
Low thermal impedance design

Applications

White LED boost converters
Automotive Systems
Industrial DC/DC Conversion Circuits

Procurement Notes

Verify component authenticity by matching the manufacturer marking against official documentation. Confirm package dimensions and pinout alignment with the provided datasheet specifications. Ensure storage and handling procedures comply with moisture sensitivity levels and electrostatic discharge protection standards required for semiconductor components.

Selection Notes

Select this component based on its 80 V drain-source voltage capability and 90 A continuous current rating. Evaluate thermal management requirements using the specified junction-to-ambient and junction-to-case resistance values. Consider the low on-resistance characteristics at various gate voltages for optimizing efficiency in power conversion applications.

Part Context

This component belongs to the Analog Power N-channel MOSFET series designed for power switching applications. It employs trench technology to achieve low on-resistance and fast switching speeds. The device is suitable for use in environments requiring robust performance in automotive, industrial, and lighting systems.