SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The AM90N20-78B is a single N-channel Power MOSFET manufactured by Analog Power Inc. It features a maximum drain-source voltage (VDS) of -200 V and a gate-source voltage (VGS) rating of 20 V. The device has an on-resistance (RDS(on)) of 78 mΩ measured at a gate drive voltage of 10 V. Key electrical parameters include a continuous drain current (ID) of 30 A, a total gate charge (QG) of 32 nC, and a power dissipation (PD) capacity of 250 W. The component is housed in a TO-263 package.
Verify the manufacturer designation as Analog Power Inc. or KOYUELEC to ensure authenticity. Confirm the specific suffix 'B' corresponds to the intended packaging variant. Cross-reference the datasheet values for RDS(on) and ID against your circuit requirements. Ensure the TO-263 footprint matches your PCB layout constraints before finalizing procurement.
Select this component when a 200 V N-channel MOSFET is required for medium-power switching applications. The 78 mΩ on-resistance offers a balance between conduction loss and cost. Verify that the 30 A current rating exceeds your peak load demands. Consider the TO-263 package for adequate heat sinking solutions in your design.
This part belongs to the AM90 series of N-channel Power MOSFETs from Analog Power Inc. The series is designed for general-purpose power switching. The TO-263 package provides a reliable surface-mount solution for industrial and consumer electronics. It complements other devices in the lineup offering varying voltage and current ratings.
Check for direct substitutes within the same voltage and current class. Verify pinout compatibility if replacing in existing designs. Compare thermal resistance values to ensure equivalent heat dissipation capabilities.