AMC2M0080120D

$24.85

Description：SICFET N-CH 1200V 36A TO247
Series：WBG
Mfr：Analog Power Inc.
Package：Bulk

SKU:fee80d331b5c Category: Single FETs, MOSFETs Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：SICFET N-CH 1200V 36A TO247
Series：WBG
Mfr：Analog Power Inc.
Package：Bulk
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1.2 kV
Current - Continuous Drain (Id) @ 25°C：36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：80mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：71 nC @ 50 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：1461 pF @ 6.5 V
FET Feature：-
Power Dissipation (Max)：200W (Tc)
Operating Temperature：-55°C ~ 155°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247
Package / Case：TO-247-3

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AMC2M0080120D

Overview

The AMC2M0080120D is an N-Channel enhancement mode MOSFET manufactured by Analog Power. It features a drain-source voltage rating of 1200 V and a continuous drain current of 36 A at 25°C case temperature. The device utilizes low on-resistance trench technology, achieving a maximum rDS(on) of 80 mΩ. Thermal performance includes a junction-to-case resistance of 0.29 °C/W and a junction-to-ambient resistance of 40 °C/W. The component supports a maximum power dissipation of 200 W and operates within a junction temperature range of -55°C to 175°C.

Feature Summary

Low on-resistance trench technology for efficient conduction
Fast switching speed capabilities
Low thermal impedance design

Applications

White LED boost converters
Automotive Systems
Industrial DC/DC Conversion Circuits

Procurement Notes

Verify the manufacturer designation as Analog Power (APL), distinct from Wolfspeed or other vendors using similar naming conventions. Confirm the specific package type and pinout configuration against the official datasheet before integration. Ensure that the absolute maximum ratings, particularly regarding pulsed drain current and thermal limits, are strictly observed during circuit design to prevent device failure.

Selection Notes

Select this component for high-voltage applications requiring robust thermal management and fast switching characteristics. The 1200 V rating suits industrial and automotive environments where high breakdown voltage is critical. Evaluate the 80 mΩ on-resistance against system efficiency requirements and ensure adequate heatsinking to maintain junction temperatures within the specified operational range under load conditions.

Part Context

This part belongs to the family of high-voltage N-Channel MOSFETs designed for power switching applications. It represents a discrete semiconductor solution intended for use in circuits demanding high voltage isolation and significant current handling capabilities. The device is engineered to provide reliable performance in demanding electrical environments typical of modern power electronics systems.