AMIB108N15N3

$1.53

Description：MOSFET N-CH 150V 100A TO-263
Series：-
Mfr：Analog Power Inc.
Package：Bulk

SKU:3e87a8a949c8 Category: Single FETs, MOSFETs Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 150V 100A TO-263
Series：-
Mfr：Analog Power Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：19mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30 nC @ 6.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2236 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：300W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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AMIB108N15N3

Overview

The AMIB108N15N3 is an N-Channel MOSFET with a Drain-Source Voltage (VDS) of 150 V and Gate-Source Voltage (VGS) of ±20 V. It supports a continuous drain current (ID) of 100 A at TC=25°C and a pulsed drain current (IDM) of 400 A. The device features a low on-state resistance (rDS(on)) of 19 mΩ at VGS = 10 V and 24 mΩ at VGS = 6.5 V. Power dissipation reaches 300 W at TC=25°C, with thermal resistances RθJA of 62.5 °C/W and RθJC of 0.5 °C/W. Operating junction temperature ranges from -55 to 175 °C.

Feature Summary

Utilizes low rDS(on) trench technology for efficient conduction.
Features low thermal impedance for effective heat management.
Provides fast switching speed for dynamic performance.

Applications

LED Inverter Circuits
Inrush Limiter and Hot Swap Circuits
48V-Input DC/DC Conversion Circuits

Procurement Notes

Verify the specific datasheet revision number DS_AMIB108N15N3_1A against your design requirements. Confirm that the package limitations for power dissipation and current ratings align with your thermal management strategy. Ensure gate drive voltages match the specified thresholds for optimal rDS(on) performance. Validate all electrical parameters under your actual operating conditions before finalizing procurement.

Selection Notes

Select this component when high current handling up to 100 A is required alongside a 150 V breakdown voltage. The low thermal resistance facilitates compact designs in applications like 48V DC/DC converters. Consider the gate charge characteristics for driving efficiency in switching circuits. Ensure the operating environment stays within the -55 to 175 °C junction temperature range for reliable operation.

Part Context

This part belongs to Analog Power's N-Channel MOSFET portfolio, designed for power switching applications. It utilizes trench technology to achieve low on-resistance and fast switching speeds. The device is suitable for industrial and consumer electronics requiring robust power management solutions.