AMIB144N12N3G

AMIB144N12N3G

$1.28
  • Description:MOSFET N-CH 120V 120A TO-263
  • Series:-
  • Mfr:Analog Power Inc.
  • Package:Bulk

SKU:e8ebffb479e4 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 120V 120A TO-263
  • Series:-
  • Mfr:Analog Power Inc.
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):120 V
  • Current - Continuous Drain (Id) @ 25°C:120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):6.5V, 10V
  • Rds On (Max) @ Id, Vgs:9.6mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:30 nC @ 6.5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2318 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):300W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-263
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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AMIB144N12N3G

Procurement Notes

Verify the manufacturer identity as Analog Power Inc. is not a recognized standard entity for this part number, which typically belongs to onsemi. Confirm the exact datasheet source and revision date. Ensure the component matches the specified package and electrical ratings before procurement. Request official documentation to validate authenticity and specifications.

Selection Notes

Select this component based on its specific voltage and current ratings suitable for high-power switching applications. Verify compatibility with the intended gate drive circuitry and thermal management requirements. Ensure the package type fits the PCB layout constraints. Cross-reference the pinout and electrical characteristics with the system design specifications to ensure proper integration and performance.

Part Context

The AMIB144N12N3G is a silicon carbide (SiC) MOSFET manufactured by onsemi. It features a 1200V breakdown voltage and a typical on-resistance of 144mOhms. The device is designed for high-efficiency power conversion applications, offering superior performance compared to traditional silicon devices in terms of switching speed and thermal stability.

Replacement Considerations

Direct replacements include other 1200V SiC MOSFETs from onsemi or competitors like Wolfspeed and ROHM. Ensure the replacement has comparable Rds(on), Qg, and thermal resistance. Verify package compatibility and pinout alignment. Check if the alternative meets the same AEC-Q101 reliability standards if automotive application is required.

AMIB144N12N3GAMIB144N12N3G
$1.28
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