AMIF100S201

$1.46

Description：MOSFET N-CH 100V 200A TO-263
Series：-
Mfr：Analog Power Inc.
Package：Bulk

SKU:c5ce445e8e3b Category: Single FETs, MOSFETs Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 200A TO-263
Series：-
Mfr：Analog Power Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4mOhm @ 45A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：66 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5720 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：300W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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AMIF100S201

Overview

The AMIF100S201 is an N-channel power MOSFET featuring a 100V drain-source voltage rating and a maximum continuous drain current of 200A at 25°C case temperature. It utilizes low on-resistance trench technology to achieve a maximum rDS(on) of 4mΩ at VGS=10V. The device supports a pulsed drain current of 800A and offers a total gate charge of 66nC. Thermal performance includes a junction-to-case resistance of 0.5°C/W and a junction-to-ambient resistance of 62.5°C/W, with an operating temperature range from -55°C to 175°C.

Feature Summary

Low on-resistance trench technology for efficient conduction
Fast switching speed capabilities
Low thermal impedance design

Applications

White LED boost converters
Automotive systems
Industrial DC/DC conversion circuits

Procurement Notes

Verify the manufacturer designation as Analog Power Inc. against official documentation, as this entity differs from common industry suppliers like Infineon or IR. Confirm that the datasheet version DS_AMIF100S201_1B represents the final production specification rather than a preliminary release. Ensure component authenticity through authorized distribution channels to avoid counterfeit risks associated with less common semiconductor brands.

Selection Notes

Select this component for applications requiring high current handling up to 200A with a 100V breakdown voltage. The 4mΩ on-resistance at 10V gate drive makes it suitable for low-loss switching in industrial and automotive environments. Consider the 62.5°C/W junction-to-ambient thermal resistance when designing heatsinking solutions for ambient temperature operations.

Part Context

This part belongs to the family of N-channel enhancement mode power MOSFETs designed for general-purpose power switching. It employs trench gate technology to minimize conduction losses while maintaining robust avalanche energy ratings. The device is intended for surface-mount integration into power management modules where high efficiency and thermal stability are critical requirements.