AMR032V120H1

$17.67

Description：1200V 32MR, TO247-4L, INDUSTRIAL
Series：-
Mfr：Luminus Devices Inc.
Package：Tube

SKU:0d46a877bd0e Category: Single FETs, MOSFETs Brand: Luminus Devices Inc.

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Product introduction

Product Detailed Parameters

Description：1200V 32MR, TO247-4L, INDUSTRIAL
Series：-
Mfr：Luminus Devices Inc.
Package：Tube
FET Type：N-Channel
Technology：SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：77A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：43mOhm @ 40A, 15V
Vgs(th) (Max) @ Id：4V @ 11.5mA
Gate Charge (Qg) (Max) @ Vgs：134 nC @ 15 V
Vgs (Max)：+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds：3318 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：417W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L
Package / Case：TO-247-4

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AMR032V120H1

Overview

The AMR032V120H1 is a high-power Silicon Carbide (SiC) MOSFET transistor manufactured by Analog Power Conversion-Electronics, LLC. It features a TO-247-4L package and offers a DC reverse voltage of 1200 V with a typical on-resistance of 32 mΩ at 25°C. The device supports a continuous drain current of 77 A at 25°C case temperature and operates within a junction temperature range of -55°C to 175°C. Key electrical characteristics include a total gate charge of 134 nC and low switching energy values.

Feature Summary

High blocking voltage combined with low on-resistance for efficient power handling
High switching speed supported by low capacitance and very low switching losses
Excellent avalanche ruggedness for robust operation under stress conditions
Very fast and robust intrinsic body diode featuring low reverse recovery

Applications

Solar inverters
Uninterrupted power supplies
Switch mode power supplies
Motor drives

Procurement Notes

Verify the manufacturer designation as Analog Power Conversion-Electronics, LLC, distinct from Luminus Devices. Confirm the specific ordering suffix and packing type (Tube, 300 units) against official distributor catalogs. Ensure the preliminary datasheet revision matches the required production specifications before finalizing procurement orders.

Selection Notes

Select this component for applications requiring high-voltage SiC performance with low thermal resistance. Evaluate the 32 mΩ on-resistance and 134 nC gate charge against system efficiency targets. Consider the TO-247-4L package dimensions and recommended solder pad layout for PCB integration. Verify thermal management capabilities given the 40°C/W junction-to-ambient resistance.

Part Context

This part belongs to the category of high-power SiC MOSFET transistors designed for demanding power electronics environments. It utilizes silicon carbide semiconductor technology to achieve superior thermal and electrical performance compared to traditional silicon devices. The TO-247-4L package provides mechanical stability and efficient heat dissipation for industrial-grade applications.