AMR402N

$1.33

Description：MOSFET N-CH 200V 5.4A DFN5X6
Series：-
Mfr：Analog Power Inc.
Package：Bulk

SKU:da66a858084e Category: Single FETs, MOSFETs Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 200V 5.4A DFN5X6
Series：-
Mfr：Analog Power Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：118mOhm @ 1A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18 nC @ 6 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：894 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN (5x6)
Package / Case：8-PowerVDFN

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AMR402N

Overview

The AMR402N is an N-channel MOSFET with a 200V drain-source voltage rating and a ±20V gate-source voltage limit. It features a maximum on-state resistance of 118mΩ at VGS=10V and 148mΩ at VGS=6V. The device supports a continuous drain current of 5.4A at 25°C and a pulsed drain current of 20A. Thermal performance includes a junction-to-ambient resistance of 65°C/W in steady state. Operating temperatures range from -55°C to 150°C.

Feature Summary

Utilizes low RDS(on) trench technology for high efficiency
Provides low thermal impedance for demanding applications
Designed for fast switching speed operations

Applications

PoE PSE and PD circuits
LED inverter circuits
48V-input DC/DC conversion circuits

Procurement Notes

Verify the specific datasheet revision (DS_AMR402N_1A) matches your design requirements, as the document is marked preliminary. Confirm that the DFN5X6-8L package footprint aligns with your PCB layout constraints. Ensure thermal management strategies account for the specified junction-to-ambient resistance ratings under your expected operating conditions.

Selection Notes

Select this component when a 200V blocking capability is required alongside moderate current handling up to 5.4A. The low on-resistance makes it suitable for power conversion applications where conduction losses must be minimized. Verify that the gate drive voltage meets the threshold requirements for optimal RDS(on) performance in your specific circuit topology.

Part Context

This part belongs to the Analog Power Inc. discrete semiconductor portfolio, specifically within their N-channel MOSFET lineup. It is designed for general-purpose switching applications requiring robust construction and standard level gate drive compatibility. The component is manufactured in a surface-mount DFN5X6-8L package to facilitate automated assembly.