AMR416N

$0.99

Description：MOSFET N-CH 100V 75A DFN5X6
Series：-
Mfr：Analog Power Inc.
Package：Bulk

SKU:261d336590d8 Category: Single FETs, MOSFETs Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 75A DFN5X6
Series：-
Mfr：Analog Power Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：18A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：10mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：51 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：7442 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN (5x6)
Package / Case：8-PowerVDFN

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AMR416N

Overview

The AMR416N is an N-channel enhancement mode MOSFET in a DFN5X6-8L package. It features a Drain-Source Voltage (VDS) of 100 V and a Gate-Source Voltage (VGS) rating of ±20 V. The device supports a continuous drain current (ID) of 18 A at 25°C and 15 A at 70°C, with a pulsed drain current (IDM) of 90 A. On-state resistance (rDS(on)) is 10 mΩ at VGS = 10 V and 12 mΩ at VGS = 4.5 V. Thermal resistance (RθJA) is 65 °C/W. Operating junction temperature ranges from -55 to 150 °C.

Feature Summary

Utilizes low rDS(on) trench technology for efficient conduction.
Features low thermal impedance for effective heat dissipation.
Designed for fast switching speed performance.

Applications

White LED boost converters
Automotive Systems
Industrial DC/DC Conversion Circuits

Procurement Notes

Verify the specific datasheet revision number against the manufacturer's official documentation before finalizing procurement. Confirm that the DFN5X6-8L package dimensions match the target PCB footprint requirements. Ensure that the electrical characteristics align with the system's voltage and current specifications under expected operating temperatures.

Selection Notes

Select this component for applications requiring a 100 V N-channel MOSFET with low on-resistance. Consider the 65 °C/W thermal resistance when designing the thermal management solution. Verify gate drive compatibility with the specified threshold voltage and total gate charge values to ensure optimal switching performance.

Part Context

The AMR416N belongs to the Analog Power Inc. family of N-channel MOSFETs designed for power switching applications. It utilizes trench technology to achieve low on-resistance and fast switching speeds. The component is housed in a compact DFN5X6-8L surface-mount package suitable for space-constrained designs.