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Product Detailed Parameters
- Description：MOSFET N-CH 100V 100A DFN5X6
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：23A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6.2mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：28 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2979 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：5W (Ta), 125W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-DFN (5x6)
- Package / Case：8-PowerVDFN
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Overview
The AMR424N is a single N-Channel Silicon MOSFET manufactured by Analog Power Inc. It features a drain-source voltage (VDS) rating of 100 V and supports continuous drain currents of 23 A at ambient temperature and 100 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 6.2 mΩ. Key electrical parameters include a maximum gate-source voltage (Vgs) of ±20 V and a maximum input capacitance (Ciss) of 2979 pF measured at 15 V. Thermal performance specifies power dissipation limits of 5 W at ambient temperature and 125 W at case temperature, with an operating junction temperature range spanning from -55°C to 150°C.
Feature Summary
- High current handling capability with 100 A case-rated drain current support
- Low on-resistance design for efficient power switching applications
- Robust thermal management allowing up to 125 W dissipation at case temperature
- Wide operating temperature range suitable for demanding environments
Applications
- Power management circuits requiring high-efficiency switching
- DC-DC converter topologies utilizing N-channel configurations
- Industrial power supply systems needing robust thermal performance
Procurement Notes
Verify the specific datasheet version directly from Analog Power Inc. or authorized distributors to confirm current RoHS compliance status and ECCN classification. Ensure the DFN5X6 package dimensions match your PCB footprint requirements precisely. Cross-reference the active status with official manufacturer channels before finalizing procurement decisions.
Selection Notes
Select this component when a 100 V N-Channel MOSFET with low Rds(on) is required for high-current applications. Consider the DFN5X6 package constraints regarding thermal pad exposure and soldering profiles. Evaluate the 6.2 mΩ resistance against system efficiency targets and ensure the 23 A/100 A current ratings align with peak load demands under expected thermal conditions.
Part Context
Analog Power Inc. specializes in application-specific power management solutions, including N-Channel and P-Channel MOSFETs. The company offers devices with on-resistance as low as 1 mΩ across various packages like DFN and SO. The AMR424N fits within their portfolio of silicon MOSFETs designed for efficient power conversion and management tasks.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Verify compatibility with alternative components based on matching VDS, ID, Rds(on), and package specifications through official manufacturer cross-reference tools.
