AMR462N

$0.87

Description：MOSFET N-CH 60V 80A DFN5X6
Series：-
Mfr：Analog Power Inc.
Package：Bulk

SKU:3d8fc848d117 Category: Single FETs, MOSFETs Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 80A DFN5X6
Series：-
Mfr：Analog Power Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：28A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：60 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：7283 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-DFN (5x6)
Package / Case：8-PowerVDFN

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AMR462N

Overview

The AMR462N is an N-Channel MOSFET with a Drain-Source Voltage (VDS) of 60 V and Gate-Source Voltage (VGS) of ±20 V. It features a maximum on-resistance (rDS(on)) of 4.9 mΩ at VGS = 4.5 V and 4.3 mΩ at VGS = 10 V. The continuous drain current (ID) is 28 A at 25°C and 22 A at 70°C, while the pulsed drain current (IDM) reaches 100 A. Operating junction temperature ranges from -55 to 150 °C. Thermal resistance (junction-to-ambient) is 65 °C/W.

Feature Summary

Utilizes low rDS(on) trench technology for efficient conduction.
Features low thermal impedance for effective heat dissipation.
Designed for fast switching speed in power conversion applications.

Applications

Automotive Systems
DC/DC Conversion Circuits
Battery Powered Power Tools

Procurement Notes

Verify the specific datasheet revision number against the manufacturer's official documentation before finalizing procurement. Confirm that the DFN5X6-8L package dimensions match the target PCB footprint requirements. Ensure that the electrical ratings align with the system's peak voltage and current stress conditions under all operating temperatures.

Selection Notes

Select this component when a 60-V breakdown voltage and low on-resistance are required for high-efficiency switching. Consider the 65 °C/W thermal resistance rating for heatsinking calculations in steady-state operation. Evaluate the gate charge parameters to ensure compatibility with the driving circuit's switching frequency capabilities.

Part Context

This device belongs to the Analog Power Inc. family of N-Channel MOSFETs designed for general-purpose power switching. It utilizes trench technology to achieve low on-resistance and fast switching characteristics within a compact surface-mount package suitable for modern electronic designs.

Replacement Considerations

Cross-reference pinout and thermal specifications when substituting. Verify that any alternative part meets or exceeds the 60-V VDS and 28-A ID ratings.