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Product Detailed Parameters
- Description：GAN FET N-CH 650V 13A DFN8X8
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：180mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.8 nC @ 6 V
- Vgs (Max)：±18V
- Input Capacitance (Ciss) (Max) @ Vds：760 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：52W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：4-DFN (8x8)
- Package / Case：4-PowerTSFN
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Overview
The AMTP65H150G4LSGB is a single N-channel Gallium Nitride (GaN) FET manufactured by Analog Power Inc. It features a drain-source voltage rating of 650 V and a continuous drain current of 13 A at case temperature. The device exhibits an on-resistance of 150 mΩ, with a maximum value of 180 mΩ at 10 A and 10 V gate drive. Key electrical parameters include a threshold voltage of 1 V and a total gate charge of 8.8 nC. Packaged in a surface-mount 4-DFN (8x8) footprint, it is designed for high-efficiency power conversion applications.
Feature Summary
- Utilizes low on-resistance GaN technology for enhanced efficiency
- Features low gate charge to support high-speed switching operations
- Designed for compact surface-mount integration
Applications
- High-frequency DC/DC converters
- Power supply modules
- Industrial motor drives
Procurement Notes
Verify the specific ordering suffix and package variant against the manufacturer's official datasheet before procurement. Confirm that the component matches the required thermal management specifications for the intended application environment. Ensure compatibility with existing gate driver circuits regarding voltage levels and drive strength. Cross-reference part numbers to avoid counterfeit or obsolete stock issues during sourcing.
Selection Notes
Select this component when designing systems requiring high-voltage handling with minimal conduction losses. The low gate charge facilitates faster switching transitions, reducing dynamic losses in high-frequency topologies. Consider the thermal performance within the 4-DFN package relative to the expected power dissipation. Evaluate the 650 V rating to ensure adequate headroom for transient voltages in the target circuit design.
Part Context
This component belongs to Analog Power Inc.'s portfolio of single FETs and MOSFETs. The brand specializes in power management solutions, offering various channel types and packages. The AMTP series represents their focus on advanced semiconductor materials for improved power density and efficiency in modern electronic designs.
Replacement Considerations
Consult official substitution lists from Analog Power Inc. for verified compatible parts. Do not assume pin-to-pin compatibility with other manufacturers' devices without detailed parameter comparison. Verify that any substitute maintains equivalent voltage, current, and thermal ratings.
