AO3400

Description：MOSFET N-CH 30V 5.8A SOT23-3
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:4fb87d02cd40 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 5.8A SOT23-3
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：28mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id：1.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：630 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：3-SMD, SOT-23-3 Variant

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AO3400

Overview

The AO3400 is a 30V N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to achieve low on-resistance and gate charge, supporting operation with gate voltages as low as 2.5V. Key electrical parameters include a drain-source voltage of 30V, continuous drain current of 5.8A at VGS=10V, and maximum junction-to-ambient thermal resistance of 125°C/W. The device is housed in a SOT-23 package.

Feature Summary

Advanced trench MOSFET technology for extremely low RDS(ON)
Suitable for load switch applications
Compatible with PWM applications

Applications

Load switching
PWM applications

Procurement Notes

Verify the manufacturer part number against official Alpha & Omega Semiconductor documentation to confirm specifications. Ensure the component meets RoHS compliance standards if required by your design. Confirm that the application does not involve life support devices or systems, as such uses are explicitly unauthorized by the manufacturer.

Selection Notes

Select this component for designs requiring a compact surface-mount N-channel MOSFET with low on-resistance. Consider the 30V drain-source voltage rating and 5.8A continuous current capability when sizing for power management tasks. Verify that the operating environment remains within the specified -55°C to 150°C junction temperature range.

Part Context

The AO3400 belongs to the AOS MDN series of N-channel enhancement mode field effect transistors. It is designed for general-purpose switching and amplification in consumer electronics. The device is constructed using silicon gate technology and features an ESD structure.