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Product Detailed Parameters
- Description：MOSFET N-CH 30V 3.6A SOT23-3
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：50mOhm @ 3.6A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：210 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.4W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：3-SMD, SOT-23-3 Variant
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Overview
The AO3406L is a P-channel enhancement mode field effect transistor from Alpha & Omega Semiconductor. It features a drain-source breakdown voltage (BVDSS) of 30 V and a gate threshold voltage (VGS(th)) ranging from 1 to 3 V. The device supports an on-state drain current (ID(ON)) of up to 15 A at 25°C, decreasing to 7.4 A at 125°C. Static drain-source on-resistance (RDS(ON)) is typically 50 mΩ at VGS=10V and 65 mΩ at VGS=4.5V. Key dynamic parameters include total gate charge Qg(10V) of 8.5 nC and reverse recovery time (trr) of 14 ns.
Feature Summary
- P-channel enhancement mode construction for low-side switching applications
- Low static drain-source on-resistance for efficient power handling
- Optimized gate charge characteristics for fast switching performance
- Robust body diode with defined reverse recovery specifications
Applications
- Consumer market electronic circuits
- Power management modules
- Load switch implementations
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure compatibility with required thermal or packaging specifications. Confirm that the component meets consumer market qualification standards as stated in the datasheet. Ensure design constraints align with the specified junction temperature limits and thermal resistance ratings provided in the electrical characteristics tables.
Selection Notes
Select this component based on the 30 V breakdown voltage and current capabilities suitable for low-voltage DC-DC converters or load switches. Evaluate the RDS(ON) values at intended gate drive voltages (4.5V or 10V) to determine conduction losses. Consider the thermal resistance rating when designing heat dissipation strategies for FR-4 boards with specified copper weights.
Part Context
This part belongs to the AO3406 series of P-channel MOSFETs manufactured by Alpha & Omega Semiconductor. The 'L' suffix typically denotes a specific package variant or revision within the product line, though functional electrical parameters remain consistent with the base AO3406 model described in the public datasheet.
Replacement Considerations
Consult official substitution guides for equivalent P-channel MOSFETs with matching 30 V BVDSS and comparable RDS(ON) values. Verify pinout compatibility and package dimensions before replacing the component in existing designs.
