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The AO3413 is a P-channel enhancement mode MOSFET manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge, supporting operation with gate voltages as low as 1.8V. The device features a drain-source voltage of -20V and a continuous drain current of -3A at 25°C. Key electrical parameters include an on-resistance of less than 80mΩ at VGS=-4.5V, a gate threshold voltage ranging from -0.4V to -1V, and a maximum power dissipation of 1.4W at 25°C. It operates within a junction temperature range of -55°C to 150°C.
Verify the specific datasheet revision and manufacturer source when sourcing components. Confirm that the received parts match the AO3413 designation and adhere to the absolute maximum ratings provided in official documentation. Ensure compliance with applicable export control regulations and legal requirements during acquisition.
Select this component for circuits requiring a compact P-channel switch with low drive voltage capability. The SOT-23 package suits space-constrained designs. Evaluate thermal performance against the specified junction-to-ambient resistance values based on the actual PCB copper area and airflow conditions.
This part belongs to the family of small-signal P-channel MOSFETs produced by Alpha & Omega Semiconductor. It is designed for general-purpose switching tasks where low input drive levels are necessary. The device is housed in a standard surface-mount SOT-23 package.
Direct substitutes must match the -20V rating, -3A current capacity, and SOT-23-3L footprint. Verify that alternative devices offer comparable RDS(ON) at -1.8V or -2.5V gate drive if low-voltage logic compatibility is required.
The device supports operation with gate voltages as low as 1.8V.
The typical body diode reverse recovery time is 37ns under test conditions of IF=-3A and dI/dt=100A/ms.