AO3413A

$0.41

Description：SOT-23-3 POWER MOSFETS ROHS
Series：UMW
Mfr：UMW
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:eb6e408d65ed Category: Single FETs, MOSFETs Brand: UMW

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Product introduction

Product Detailed Parameters

Description：SOT-23-3 POWER MOSFETS ROHS
Series：UMW
Mfr：UMW
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：66mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：745 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23
Package / Case：TO-236-3, SC-59, SOT-23-3

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AO3413A

Overview

The UMW AO3413A is a P-channel silicon MOSFET housed in an SOT-23 package. It features a drain-source voltage of -20V and a continuous drain current of -3A at 25°C. The device achieves a maximum on-resistance of 66mΩ at VGS=-4.5V and 80mΩ at VGS=-2.5V. Maximum power dissipation is 1.4W at 25°C, with a junction temperature range of -55°C to 150°C.

Feature Summary

Low on-resistance for efficient switching
Enhanced gate threshold voltage control
High body diode reverse recovery capability

Applications

Power management circuits
Load switches
Motor drivers

Procurement Notes

Verify the specific ordering code against the manufacturer's official documentation to ensure correct packaging and delivery mode specifications. Confirm that the component meets all required electrical parameters for the intended application environment before finalizing procurement decisions.

Selection Notes

Select this component based on its low on-resistance characteristics and thermal performance within the specified operating temperature range. Ensure the gate drive voltage aligns with the device's threshold requirements for optimal conduction efficiency.

Part Context

This part belongs to the AO3413 series of P-channel MOSFETs manufactured by UMW. It shares similar structural characteristics with other devices in the family but offers specific electrical ratings tailored for compact surface-mount applications requiring reliable switching performance.