AO3414A

$0.35

Description：20V 4.2A 400MW [email protected],3.6A 1.
Series：UMW
Mfr：UMW
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4cf30bfa5ff3 Category: Single FETs, MOSFETs Brand: UMW

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Product introduction

Product Detailed Parameters

Description：20V 4.2A 400MW [email protected],3.6A 1.
Series：UMW
Mfr：UMW
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：26mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.2 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：436 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23
Package / Case：TO-236-3, SC-59, SOT-23-3

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AO3414A

Overview

The UMW AO3414A is an N-Channel Enhancement Mode MOSFET housed in a SOT-23 surface-mount package. It features a Drain-Source Voltage (VDS) of 20V and a continuous Drain Current (ID) of 4.2A at 25°C, dropping to 3.2A at 70°C. The device offers low on-state resistance: RDS(ON) is typically 26mΩ at VGS=4.5V, 36mΩ at VGS=2.5V, and 57mΩ at VGS=1.8V. Total gate charge (Qg) is 6.2nC. Power dissipation is rated at 1.4W at 25°C and 0.9W at 70°C. Thermal resistance junction-to-ambient is 125°C/W, with a junction temperature range of -55°C to 150°C.

Feature Summary

Utilizes advanced trench technology for high power handling and low on-resistance.
Capable of operation with low gate drive voltages down to 1.8V.
Features fast switching characteristics with low total gate charge.

Applications

Load switch applications
PWM motor control circuits

Procurement Notes

Verify the specific ordering code against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the requested variant matches the required thermal and electrical specifications for the intended operating environment. Cross-reference datasheet revision dates to ensure compatibility with design requirements.

Selection Notes

Select this component for low-voltage, low-current switching tasks requiring efficient conduction at reduced gate drive levels. Evaluate thermal management needs based on the specified power dissipation ratings and ambient temperature conditions. Ensure the application voltage remains within the 20V breakdown limit.

Part Context

This part belongs to the UMW AO3414 series of N-channel enhancement mode MOSFETs. These devices are designed for general-purpose switching applications where small form factor and efficiency are prioritized. The SOT-23 package allows for compact PCB layouts in portable electronics and battery-powered systems.

Replacement Considerations

Check pinout compatibility and electrical parameters such as VDS, ID, and RDS(ON) when substituting. Verify that any alternative device supports the same low-voltage gate drive requirements and fits within the available thermal constraints of the original design.