ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET P-CH 20V 4A SOT23-3L
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：43mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17.2 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：1450 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：3-SMD, SOT-23-3 Variant
Download product information
Overview
The AO3415 is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and fast switching capabilities. The device features a drain-source voltage of -20V and supports continuous drain currents up to -4A at VGS = -4.5V. Key electrical parameters include an on-resistance of less than 41mΩ at VGS = -4.5V, less than 53mΩ at VGS = -2.5V, and less than 65mΩ at VGS = -1.8V. It operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Advanced trench technology for excellent RDS(ON) performance
- Low gate charge enabling operation with gate voltages as low as 1.8V
- ESD protected structure
- Suitable for load switch applications
Applications
- Load switch applications
- DC/DC converters
- Power management modules
Procurement Notes
Verify the specific manufacturer datasheet revision (e.g., Rev 7: Sep 2011) against your design requirements. Confirm that the SOT-23 package thermal characteristics align with your board layout, as RθJA depends on copper area and airflow. Ensure gate drive voltages meet the minimum thresholds specified in the static parameters table for the desired current handling.
Selection Notes
Select this component when a low-voltage P-channel MOSFET is required for high-efficiency switching. The device is optimized for applications needing low on-resistance at standard logic levels (-4.5V and -2.5V). Consider the thermal resistance limits if operating near maximum current ratings. Verify compatibility with the system's negative supply rail configuration typical for high-side P-channel switches.
Part Context
The AO3415 belongs to the family of low-voltage power MOSFETs designed for portable and industrial electronics. Manufactured by Alpha & Omega Semiconductor, it is part of a broader portfolio including N-channel variants like the AO3416. These devices are commonly used in battery-powered systems where space efficiency and power loss reduction are critical design constraints.
Replacement Considerations
Direct substitutes may include other -20V P-Channel MOSFETs in SOT-23 packages from manufacturers such as VBsemi or Panjit, provided they meet the -4A current and <65mΩ on-resistance specifications. Always verify pinout compatibility and thermal performance before substitution.
