AO3416A-EV

AO3416A-EV

$0.26
  • Description:MOSFET P-CH 20V 6.5A SOT23
  • Series:-
  • Mfr:EVVO
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:11dd6da55962 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET P-CH 20V 6.5A SOT23
  • Series:-
  • Mfr:EVVO
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs:25mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id:1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:10 nC @ 4.5 V
  • Vgs (Max):±8V
  • Input Capacitance (Ciss) (Max) @ Vds:1650 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):1.4W (Ta)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23
  • Package / Case:TO-236-3, SC-59, SOT-23-3

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AO3416A-EV

Overview

The AO3416A-EV is an N-channel enhancement mode field-effect transistor manufactured by EVVO. It utilizes advanced trench technology to achieve low on-resistance and gate charge, supporting operation with gate voltages as low as 1.8V. The device is housed in a surface-mount SOT-23 package. Key electrical parameters include a drain-source voltage (VDS) of 20V and a continuous drain current (ID) of 6.5A at VGS = 4.5V. The on-state resistance (RDS(ON)) is specified at less than 22mΩ under the same gate voltage conditions.

Feature Summary

  • Advanced trench technology for excellent RDS(ON) and low gate charge
  • Supports operation with gate voltages as low as 1.8V
  • N-channel enhancement mode configuration

Applications

  • Power management circuits
  • Load switching applications
  • DC-DC converter output stages

Procurement Notes

Verify the manufacturer designation EVVO against Alpha & Omega Semiconductor specifications, as AO3416A is a standard part number often associated with AOS. Confirm that the suffix -EV does not indicate a non-standard variant or evaluation board component if used in production. Ensure the datasheet provided matches the exact pinout and thermal characteristics required for your design.

Selection Notes

Select this component when a 20V N-channel MOSFET with low RDS(ON) in a compact SOT-23 package is required. The low gate drive requirement (1.8V) makes it suitable for logic-level control interfaces. Verify that the 6.5A current rating and 1.4W power dissipation meet the thermal and load requirements of the specific application circuit.

Part Context

The AO3416A is a widely recognized N-channel MOSFET originally developed by Alpha & Omega Semiconductors. The EVVO branding indicates a specific manufacturer or distributor lot for this component. The part belongs to the family of small-signal power MOSFETs designed for efficient switching in portable and battery-powered devices due to its low profile and high performance.

Replacement Considerations

Direct substitutes include other 20V N-channel SOT-23 MOSFETs with comparable RDS(ON) and ID ratings. Verify pin compatibility and thermal resistance values before substitution. Generic equivalents from other manufacturers may require verification of gate threshold voltage and capacitance parameters.

AO3416A-EVAO3416A-EV
$0.26
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