SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The AO3416A-EV is an N-channel enhancement mode field-effect transistor manufactured by EVVO. It utilizes advanced trench technology to achieve low on-resistance and gate charge, supporting operation with gate voltages as low as 1.8V. The device is housed in a surface-mount SOT-23 package. Key electrical parameters include a drain-source voltage (VDS) of 20V and a continuous drain current (ID) of 6.5A at VGS = 4.5V. The on-state resistance (RDS(ON)) is specified at less than 22mΩ under the same gate voltage conditions.
Verify the manufacturer designation EVVO against Alpha & Omega Semiconductor specifications, as AO3416A is a standard part number often associated with AOS. Confirm that the suffix -EV does not indicate a non-standard variant or evaluation board component if used in production. Ensure the datasheet provided matches the exact pinout and thermal characteristics required for your design.
Select this component when a 20V N-channel MOSFET with low RDS(ON) in a compact SOT-23 package is required. The low gate drive requirement (1.8V) makes it suitable for logic-level control interfaces. Verify that the 6.5A current rating and 1.4W power dissipation meet the thermal and load requirements of the specific application circuit.
The AO3416A is a widely recognized N-channel MOSFET originally developed by Alpha & Omega Semiconductors. The EVVO branding indicates a specific manufacturer or distributor lot for this component. The part belongs to the family of small-signal power MOSFETs designed for efficient switching in portable and battery-powered devices due to its low profile and high performance.
Direct substitutes include other 20V N-channel SOT-23 MOSFETs with comparable RDS(ON) and ID ratings. Verify pin compatibility and thermal resistance values before substitution. Generic equivalents from other manufacturers may require verification of gate threshold voltage and capacitance parameters.