AO3416A

$0.35

Description：20V 6.5A [email protected],6.5A 1.4W 1.1
Series：UMW
Mfr：UMW
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4995721700d3 Category: Single FETs, MOSFETs Brand: UMW

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Product introduction

Product Detailed Parameters

Description：20V 6.5A [email protected],6.5A 1.4W 1.1
Series：UMW
Mfr：UMW
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：25mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id：1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：1650 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23
Package / Case：TO-236-3, SC-59, SOT-23-3

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AO3416A

Overview

The UMW AO3416A is an N-channel MOSFET housed in a SOT-23 package. It features a Drain-Source Voltage (VDS) of 20V and a continuous Drain Current (ID) of 6A at VGS = 4.5V. The On-State Resistance (RDS(ON)) is less than 25mΩ at VGS = 4.5V, less than 33mΩ at VGS = 2.5V, and less than 51mΩ at VGS = 1.8V. Absolute maximum ratings include a Gate-Source Voltage (VGS) of ±8V, Pulsed Drain Current (IDM) of 30A, Power Dissipation (PD) of 1.4W at 25°C, Junction Temperature (TJ) of 150°C, and Storage Temperature Range of -55°C to 150°C.

Feature Summary

Low on-state resistance across multiple gate voltage levels for efficient power switching
High continuous drain current capability suitable for compact load switch applications
Integrated body diode with defined reverse recovery characteristics

Applications

Load switches
Power management circuits
Battery protection modules

Procurement Notes

Verify the specific ordering code against the manufacturer's official documentation to ensure correct package and tape-and-reel specifications. Confirm that the component meets all required electrical parameters for your specific application environment before finalizing procurement decisions.

Selection Notes

Select this component based on its 20V rating and low RDS(ON) performance at various gate drive voltages. Ensure the thermal design accommodates the specified junction-to-ambient thermal resistance and power dissipation limits under expected operating conditions.

Part Context

This device belongs to the UMW lineup of surface-mount N-channel MOSFETs designed for general-purpose switching applications. It utilizes standard SOT-23 packaging to facilitate automated assembly and space-constrained PCB layouts while maintaining robust electrical performance.

Replacement Considerations

Consult official substitution lists from UMW or equivalent manufacturers for verified alternatives. Ensure any replacement matches the pinout, voltage ratings, and thermal characteristics of the original specification.