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Product Detailed Parameters
- Description：MOSFET P-CH 30V 2.6A SOT23-3L
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：110mOhm @ 2.6A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：240 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.4W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：3-SMD, SOT-23-3 Variant
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Overview
The AO3421 is a surface-mount P-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge, supporting operation with gate voltages as low as 2.5V. The device features a maximum drain-source voltage of -20V and a continuous drain current of -2A at 25°C. Key electrical parameters include an on-resistance of less than 92mΩ at Vgs=-10V and less than 166mΩ at Vgs=-2.5V. It is housed in an SOT-23 package and offers ESD protection rated at 2000V HBM.
Feature Summary
- Advanced trench technology for excellent on-resistance and low gate charge
- Capable of operation with gate voltages as low as 2.5V
- Suitable for use as a load switch or in PWM applications
- ESD protected with a rating of 2000V HBM
Applications
- Load switching circuits
- Pulse Width Modulation (PWM) applications
Procurement Notes
Verify the specific manufacturer source when sourcing this component, as multiple vendors produce the AO3421 part number. Confirm that the datasheet aligns with the required electrical specifications, particularly the -20V drain-source voltage and -2A current ratings. Ensure the package type matches the design requirements, typically SOT-23. Check for RoHS compliance if environmental standards are mandatory for the assembly process.
Selection Notes
Select the AO3421 for designs requiring a compact P-channel MOSFET with low drive voltage capability. Its ability to operate effectively at Vgs levels down to 2.5V makes it suitable for systems powered by lower voltage logic levels. The low on-resistance ensures efficient power handling for moderate current loads up to 2A. Consider the thermal performance within the SOT-23 package for the expected duty cycle and ambient temperature conditions.
Part Context
This component belongs to the family of P-channel enhancement mode field effect transistors from Alpha & Omega Semiconductor. These devices are designed for general-purpose switching applications where space efficiency and low drive requirements are critical. The AO3421 specifically targets applications needing reliable performance in small form factors while maintaining robust electrical characteristics for standard digital control interfaces.
