ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET P-CH 30V 3A SOT23-3L
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：95mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：215 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.4W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：3-SMD, SOT-23-3 Variant
Download product information
Overview
The AO3421E is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench MOSFET technology to achieve extremely low on-state drain-source resistance (RDS(ON)). The device features a Drain-Source Voltage (VDS) of -30 V and a continuous Drain Current (ID) of -3 A at VGS=-10V. Key electrical parameters include an RDS(ON) of less than 95 mΩ at VGS=-10V and less than 160 mΩ at VGS=-4.5V. It operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- Advanced trench MOSFET technology provides extremely low on-state resistance for efficient power switching.
- Integrated ESD protection rated at HBM Class 2.
- Designed for high-speed switching with optimized gate charge characteristics.
Applications
- Load switch applications
- Battery protection circuits
Procurement Notes
Verify the specific datasheet revision, as Alpha & Omega Semiconductor reserves the right to change product specifications without notice. Confirm that the component meets RoHS and Sony 259 standards if lead-free requirements are necessary. Ensure the supplier provides traceability documentation matching the manufacturer's terms and conditions of sale.
Selection Notes
Select this component when a compact SOT-23 package is required for low-voltage DC load switching or battery management. Evaluate thermal performance based on the application's board design, as the junction-to-ambient thermal resistance depends heavily on copper area and airflow. Verify that the gate drive voltage aligns with the specified thresholds for optimal RDS(ON).
Part Context
This part belongs to the AO34xx series of P-Channel MOSFETs from Alpha & Omega Semiconductor. These devices are engineered for general-purpose low-side and high-side switching in portable electronics and battery-powered systems where space constraints and efficiency are critical design factors.
Replacement Considerations
Direct substitutes must match the -30V VDS rating, -3A ID current capacity, and SOT-23-3L package. Verify that alternative components offer comparable RDS(ON) values at both -10V and -4.5V gate voltages to ensure equivalent circuit performance.
