AO3422

$0.46

Description：MOSFET N-CH 55V 2.1A SOT23-3
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e61f896ee2f9 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 2.1A SOT23-3
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：2.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：160mOhm @ 2.1A, 4.5V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：3.3 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：300 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.25W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：3-SMD, SOT-23-3 Variant

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AO3422

Overview

The AO3422 is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge, supporting operation over a wide gate drive range from 2.5V to 12V. Key electrical parameters include a Drain-Source Voltage (BVDSS) of 55V, a Continuous Drain Current (ID) of 2.1A at TA=25°C, and a Gate-Source Voltage rating of ±12V. The device features a maximum On-state drain-source on-resistance of 160mΩ at VGS=4.5V and 200mΩ at VGS=2.5V. Thermal characteristics specify a Power Dissipation of 1.25W at TA=25°C and a Junction-to-Ambient thermal resistance of 100°C/W steady-state.

Feature Summary

Advanced trench technology provides excellent on-resistance and low gate charge for efficient switching performance.
Wide gate drive range supports operation from 2.5V to 12V, ensuring compatibility with various logic levels.
Suitable for use as a load switch in power management applications.

Applications

Load switch applications
Power management circuits

Procurement Notes

Verify the specific ordering suffix against official Alpha & Omega Semiconductor documentation to confirm compliance with RoHS and Sony 259 specifications. Ensure the component matches the SOT-23 package outline and pin configuration shown in the datasheet before integration into designs. Confirm that the selected variant meets all absolute maximum ratings for your intended operating environment.

Selection Notes

Select this component when a 55V N-channel MOSFET with low gate charge is required for load switching. Consider the 2.1A continuous current rating and the specific RDS(ON) values at 2.5V and 4.5V gate voltages to ensure adequate performance for your drive circuitry. Evaluate thermal dissipation requirements based on the 1.25W power rating and junction temperature limits.

Part Context

The AO3422 belongs to the Alpha & Omega Semiconductor line of N-Channel Enhancement Mode Field Effect Transistors. It is designed using advanced trench technology to optimize on-resistance and switching speed. The device is electrically identical to the AO3422L, which serves as a green product ordering option. Both variants are Pb-free and meet RoHS standards.

Replacement Considerations

The AO3422L is electrically identical to the AO3422 and serves as a direct substitute. Verify package compatibility and thermal characteristics when considering alternative manufacturers' parts.