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The AO3434LS is an N-channel Power MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 3.5A at 25°C. The device utilizes advanced trench MOSFET technology to achieve low on-resistance, specified as 52mΩ at Vgs=10V and Id=4.2A. It is housed in a SOT-23-3L surface-mount package with a maximum power dissipation of 83W at case temperature. The component operates within a junction temperature range of -55°C to 150°C.
Verify the specific suffix LS against the manufacturer's official datasheet to confirm pinout and electrical tolerances match your design requirements. Ensure the ordering information corresponds to the correct tape-and-reel or tube quantity defined in the latest documentation. Cross-reference the RoHS status and environmental compliance data provided in the official product specification before finalizing procurement.
Select this component when a 30V N-channel MOSFET with 3.5A current capacity is required in a compact SOT-23-3L footprint. The low RDS(ON) characteristic makes it suitable for efficient power switching applications where minimal conduction loss is critical. Verify that the gate charge and input capacitance parameters align with the driving circuit's speed requirements.
The AO3434LS belongs to the AO3434 series from Alpha & Omega Semiconductor, which focuses on low-voltage, high-efficiency power solutions. This series leverages trench technology to reduce resistance and improve thermal handling compared to standard planar devices. The LS variant specifically denotes the SOT-23-3L package configuration used in space-constrained portable and consumer electronics designs.
The AO3434A is a related part in the same series offering similar electrical characteristics but may differ in specific package or tolerance details. Verify compatibility with the AO3434 model if substituting, ensuring all voltage, current, and thermal ratings meet or exceed the original design specifications.
The typical on-resistance is 52mΩ when measured at a gate-source voltage of 10V and a drain current of 4.2A.
The maximum operating junction temperature is 150°C.