AO3435

$0.36

Description：MOSFET P-CH 20V 2.9A SOT23-3L
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a33360bdd8f3 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 2.9A SOT23-3L
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：70mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：745 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：3-SMD, SOT-23-3 Variant

Download product information

AO3435

Overview

The AO3435 is a P-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to deliver low gate charge and excellent on-resistance characteristics. The device is housed in a surface-mount SOT-23-3 package, suitable for space-constrained designs. Key electrical specifications include a drain-source voltage of 20V and a continuous drain current of 2.9A at 25°C ambient temperature. The maximum power dissipation is rated at 1W under the same conditions. The component operates within a junction temperature range of -55°C to 150°C.

Feature Summary

P-channel MOSFET configuration utilizing advanced trench technology for optimized performance
Low gate charge capability supporting efficient switching applications
Surface-mount SOT-23-3 packaging for compact circuit board integration

Applications

Load switch implementations
PWM (Pulse Width Modulation) control circuits
Battery protection modules

Procurement Notes

Verify the specific ordering suffix to confirm packaging type, such as tape and reel or cut tape, as these affect handling procedures. Confirm RoHS compliance status if environmental regulations are mandatory for the target assembly. Check the manufacturer's latest documentation for any design-in restrictions or recommended operating conditions that may differ from historical data sheets.

Selection Notes

Select this component when a low-voltage P-channel solution is required for load switching or high-side control. Ensure the application voltage remains below the 20V drain-source limit. Consider the thermal constraints imposed by the 1W power dissipation rating in the small SOT-23-3 package. Verify that the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance.

Part Context

This part belongs to the AO34 series of single N-channel and P-channel MOSFETs from Alpha & Omega Semiconductor. The series is characterized by the use of trench FET technology to achieve low on-resistance and fast switching speeds. These components are widely used in portable electronics and battery-powered devices where efficiency and small footprint are critical design parameters.