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Product Detailed Parameters
- Description：MOSFET N-CH 30V 19A 8SO
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：19A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5.3mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2200 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The AO4202L is a 30V N-Channel MOSFET utilizing Trench technology for high-frequency switching. It features an extremely low RDS(ON) of <5.3mΩ at VGS=10V and <7mΩ at VGS=4.5V, with a continuous drain current (ID) of 19A. The device includes a 'Schottky style' soft recovery body diode and is 100% UIS tested. Key dynamic parameters include a total gate charge (Qg) of 29nC at 10V, input capacitance (Ciss) of 1840pF, and reverse transfer capacitance (Crss) of 63pF. Thermal characteristics specify a maximum junction-to-ambient resistance (RθJA) of 75°C/W and a power dissipation of 31W.
Feature Summary
- Trench MOSFET technology optimized for efficient high-frequency switching performance.
- Extremely low combination of on-resistance and reverse transfer capacitance to minimize power losses.
- Soft recovery body diode behavior characterized as 'Schottky style'.
- Manufactured with 100% Unclamped Inductive Switching (UIS) and gate resistance testing.
Applications
- High frequency switching circuits requiring low conduction losses.
- Power management systems utilizing the soft recovery body diode.
- Applications demanding verified Unclamped Inductive Switching (UIS) robustness.
Procurement Notes
Verify component authenticity through official Alpha & Omega Semiconductor channels or authorized distributors. Confirm package integrity and marking consistency against the SOIC-8 datasheet specifications. Ensure storage conditions adhere to moisture sensitivity levels prior to soldering. Review the latest revision history for any updates to electrical limits or thermal ratings before finalizing procurement orders.
Selection Notes
Select this component when a 30V N-Channel MOSFET with low gate charge and high current capability is required. The low Crss value supports fast switching speeds, while the soft recovery body diode aids in synchronous rectification or freewheeling applications. Evaluate thermal constraints carefully, as the 75°C/W junction-to-ambient resistance requires adequate PCB copper area for heat dissipation under continuous load conditions.
Part Context
The AO4202L belongs to the AO42xx series of N-Channel MOSFETs from Alpha & Omega Semiconductor. It shares the SOIC-8 surface mount package form factor common to this family. The device is designed primarily for consumer market applications, distinguishing it from automotive or industrial grade variants that may carry different qualification standards or extended temperature ranges.
Replacement Considerations
Direct substitutes must match the 30V rating, N-channel configuration, and SOIC-8 package. Verify that alternative components meet or exceed the 19A continuous current and <7mΩ on-resistance requirements. Ensure comparable gate charge and capacitance values to maintain switching timing compatibility in existing circuit designs.
FAQ
What is the specific characteristic of the body diode in the AO4202L?
The AO4202L features a 'Schottky style' soft recovery body diode, which helps minimize switching losses and voltage spikes during diode recovery.
How does the AO4202L handle inductive loads?
The device is 100% tested for Unclamped Inductive Switching (UIS) capability, ensuring reliability when switching inductive loads without external clamping protection.
