AO4262E

AO4262E

$0.34
  • Description:MOSFET N-CHANNEL 60V 16.5A 8SO
  • Series:AlphaSGT™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)

SKU:c039ff27d9f6 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CHANNEL 60V 16.5A 8SO
  • Series:AlphaSGT™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:16.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:6.5mOhm @ 16.5A, 10V
  • Vgs(th) (Max) @ Id:2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:25 nC @ 4.5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1652 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):3.1W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-SO
  • Package / Case:8-SOIC (0.154", 3.90mm Width)

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AO4262E

Overview

The AO4262E is a 60V N-Channel MOSFET manufactured by Alpha & Omega Semiconductor. It utilizes Trench Power MV technology to achieve low on-resistance and gate charge. The device features a maximum drain-source voltage of 60V, a continuous drain current of 16.5A at VGS=10V, and an on-resistance below 6.5mΩ at VGS=10V. It includes typical ESD protection rated at HBM Class 2 and has undergone 100% UIS and Rg testing.

Feature Summary

  • Utilizes Trench Power MV technology for enhanced performance
  • Features low on-resistance and low gate charge characteristics
  • Includes typical electrostatic discharge protection rated at HBM Class 2
  • Subjected to 100% Unclamped Inductive Switching and Gate Resistance testing

Applications

  • High efficiency power supplies
  • Secondary synchronous rectifier circuits

Procurement Notes

Verify the specific ordering suffix and package configuration against official Alpha & Omega Semiconductor documentation before procurement. Confirm that the component meets RoHS compliance standards and matches the required SO-8 tape and reel form factor. Ensure the supplier provides valid traceability data consistent with the manufacturer's quality assurance protocols.

Selection Notes

Select this component for applications requiring a 60V N-Channel MOSFET with high current handling capabilities. Consider its low on-resistance and gate charge specifications for optimizing switching efficiency in power management designs. Evaluate thermal performance requirements based on the junction-to-ambient resistance values provided in the datasheet.

Part Context

This part belongs to the Alpha & Omega Semiconductor lineup of power MOSFETs designed for consumer electronics and industrial systems. The AO4262E specifically targets high-efficiency power conversion applications where compact packaging and robust electrical performance are critical design parameters.

Replacement Considerations

Consult official manufacturer substitution guides for verified equivalent parts. Do not assume compatibility based solely on voltage and current ratings without verifying pinout and thermal characteristics.

FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (BVDSS) is rated at 60V.

Is the device tested for unclamped inductive switching?

Yes, the AO4262E undergoes 100% Unclamped Inductive Switching (UIS) testing as per the product summary.

AO4262EAO4262E
$0.34
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