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The AO4262E is a 60V N-Channel MOSFET manufactured by Alpha & Omega Semiconductor. It utilizes Trench Power MV technology to achieve low on-resistance and gate charge. The device features a maximum drain-source voltage of 60V, a continuous drain current of 16.5A at VGS=10V, and an on-resistance below 6.5mΩ at VGS=10V. It includes typical ESD protection rated at HBM Class 2 and has undergone 100% UIS and Rg testing.
Verify the specific ordering suffix and package configuration against official Alpha & Omega Semiconductor documentation before procurement. Confirm that the component meets RoHS compliance standards and matches the required SO-8 tape and reel form factor. Ensure the supplier provides valid traceability data consistent with the manufacturer's quality assurance protocols.
Select this component for applications requiring a 60V N-Channel MOSFET with high current handling capabilities. Consider its low on-resistance and gate charge specifications for optimizing switching efficiency in power management designs. Evaluate thermal performance requirements based on the junction-to-ambient resistance values provided in the datasheet.
This part belongs to the Alpha & Omega Semiconductor lineup of power MOSFETs designed for consumer electronics and industrial systems. The AO4262E specifically targets high-efficiency power conversion applications where compact packaging and robust electrical performance are critical design parameters.
Consult official manufacturer substitution guides for verified equivalent parts. Do not assume compatibility based solely on voltage and current ratings without verifying pinout and thermal characteristics.
The maximum drain-source voltage (BVDSS) is rated at 60V.
Yes, the AO4262E undergoes 100% Unclamped Inductive Switching (UIS) testing as per the product summary.