AO4403L

Description：MOSFET P-CH 30V 6A 8SO
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Bulk

SKU:18ad4040a4f4 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 6A 8SO
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Bulk
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：46mOhm @ 6.1A, 10V
Vgs(th) (Max) @ Id：1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.3 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：1128 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

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AO4403L

Overview

The AO4403 is a P-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., utilizing advanced trench technology. It features a drain-source voltage (VDS) of -30V and a continuous drain current (ID) of -6A at VGS=-10V. The device offers low on-resistance, specified as less than 48mΩ at VGS=-10V, less than 57mΩ at VGS=-4.5V, and less than 80mΩ at VGS=-2.5V. It supports gate voltages as low as 2.5V and has been subjected to 100% UIS and Rg testing.

Feature Summary

Advanced trench technology provides excellent on-resistance and low gate charge characteristics.
Capable of operation with gate voltages as low as 2.5V for efficient logic-level driving.
Verified through 100% Unclamped Inductive Switching (UIS) and Gate Resistance (Rg) testing.

Applications

Load switch applications
Pulse Width Modulation (PWM) control circuits

Procurement Notes

Verify the specific datasheet revision and electrical parameters against the manufacturer's official documentation before integration. Confirm that the component meets all required safety standards and environmental regulations applicable to the target market. Ensure compatibility with the intended thermal management design, as junction-to-ambient resistance values depend on the user's specific board layout and copper area.

Selection Notes

Select this component for designs requiring a -30V P-Channel MOSFET with high efficiency and fast switching capabilities. Consider the low gate threshold voltage for compatibility with lower voltage logic controllers. Evaluate the thermal performance based on the specific PCB copper area and ambient conditions, as power dissipation ratings are dependent on the mounting environment.

Part Context

This component belongs to the family of surface-mount P-Channel MOSFETs designed for general-purpose switching applications. It is housed in an SOIC-8 package, suitable for automated assembly processes. The device is engineered to balance conduction losses and switching speeds, making it appropriate for power management sections in consumer electronics and industrial equipment.