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The AO4406 is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and gate charge, supporting operation with gate voltages as low as 2.5V. The device features a drain-source voltage of 30V and a continuous drain current of 11.5A at 25°C. Key electrical parameters include an on-resistance below 14mΩ at VGS=10V, 16.5mΩ at VGS=4.5V, and 26mΩ at VGS=2.5V. It is housed in an SOIC-8 package.
Verify the specific ordering suffix against the manufacturer's datasheet to confirm compliance details such as RoHS or Halogen-free status. Ensure the component matches the required thermal resistance ratings for your specific board design, as junction-to-ambient values depend on copper area and airflow conditions rather than fixed package metrics alone.
Select this component when a high-side switching solution is required for low-voltage DC-DC converters. The low threshold voltage allows compatibility with logic-level drivers. Consider the thermal derating curves for power dissipation limits under varying ambient temperatures and pulse widths to ensure safe operating area compliance during transient events.
This part belongs to the Alpha & Omega Semiconductor MOSFET family, specifically designed for consumer market applications. It is electrically identical to the AO4406L variant, which offers additional halogen-free certification. The device is intended for general-purpose switching tasks within defined thermal and voltage constraints.
The AO4406L is confirmed as an electrically identical substitute offering halogen-free compliance. Verify pinout compatibility and thermal characteristics before swapping with other N-channel MOSFETs from different manufacturers.
No. This product has been designed and qualified for the consumer market. Applications or uses as critical components in life support devices or systems are not authorized.
The device supports a repetitive avalanche energy of 94 mJ with an inductance of 0.3mH, provided the pulse width is limited by junction temperature.