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Product Detailed Parameters
- Description：MOSFET P-CH 30V 8A 8SOIC
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 20V
- Rds On (Max) @ Id, Vgs：26mOhm @ 8A, 20V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：21 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：1100 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The AO4415 is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge characteristics. The device is designed for surface-mount applications, featuring a drain connected to the tab for efficient thermal dissipation. Standard product variants are lead-free and compliant with RoHS standards, while specific ordering options may offer green product configurations. The component is suitable for general-purpose switching tasks.
Feature Summary
- Advanced trench technology design for optimized performance
- Low on-resistance and gate charge characteristics
- Drain connected to the tab for thermal management
Applications
- Pulse Width Modulation (PWM) circuits
- Load switching applications
- General purpose switching tasks
Procurement Notes
Verify the specific ordering suffix to confirm environmental compliance status, such as Green Product or standard Lead-free specifications. Ensure the selected variant matches the required package type and thermal handling capabilities for the target application. Cross-reference official datasheets for absolute maximum ratings and electrical parameters before integration.
Selection Notes
Select this component based on its P-Channel configuration and trench technology benefits for efficiency. Evaluate the thermal requirements of the application against the tab-connected drain design. Confirm that the gate drive voltage levels align with the device's enhancement mode operation for reliable switching performance in the intended circuit topology.
Part Context
This part belongs to the Alpha & Omega Semiconductor MOSFET portfolio, specifically focusing on P-Channel enhancement mode devices. The manufacturer utilizes trench technology across similar models to provide improved on-resistance and switching speeds compared to traditional planar designs.
