AO4435

$0.88

Description：SOP-8 MOSFETS ROHS
Series：UMW
Mfr：UMW
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:6e967393e84e Category: Single FETs, MOSFETs Brand: UMW

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Product introduction

Product Detailed Parameters

Description：SOP-8 MOSFETS ROHS
Series：UMW
Mfr：UMW
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：20mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：29 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1690 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOP
Package / Case：8-SOIC (0.154", 3.90mm Width)

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AO4435

Overview

The AO4435 is a P-Channel Enhancement Mode MOSFET manufactured by UMW, utilizing advanced trench technology to achieve low gate charge and excellent on-resistance. It supports operation with gate voltages as low as 2.5V. Key electrical parameters include a Drain-Source Voltage (VDS) of -30V, a continuous Drain Current (ID) of -12A at 25°C, and a maximum Total Power Dissipation (PD) of 2.5W. The device features a Static Drain-Source On-Resistance (RDS(ON)) of less than 20mΩ at VGS=-10V and ID=-7A. Additional characteristics include a Gate Threshold Voltage (VGS(th)) ranging from -1V to -3V, a Total Gate Charge (Qg) of 18nC typical, and an Input Capacitance (Ciss) of 1175pF typical.

Feature Summary

Advanced trench technology provides low gate charge and excellent RDS(ON).
Capable of operation with gate voltages as low as 2.5V.
Suitable for battery protection and general switching applications.

Applications

Battery protection
Load switch
Uninterruptible power supply

Procurement Notes

Verify the specific manufacturer source, as the AO4435 designation is historically associated with Alpha & Omega Semiconductor but is currently listed under UMW in the provided documentation. Confirm the package type is SOP-8 and check for RoHS compliance status. Ensure the component lifecycle is active before procurement. Cross-reference the datasheet version to confirm electrical ratings match your design requirements.

Selection Notes

Select this component for designs requiring a 30V P-Channel MOSFET with high current handling capabilities up to 12A. The low RDS(ON) specification makes it suitable for efficient power switching. Consider the thermal resistance and power dissipation limits when designing heat sinks or PCB copper pads. Verify that the gate drive voltage meets the minimum requirement for full enhancement.

Part Context

The AO4435 is a surface-mount power MOSFET designed for efficiency in switching circuits. Manufactured by UMW, it employs trench technology to minimize conduction losses. The device is housed in an SOP-8 package, providing a compact solution for space-constrained designs. It operates within a junction temperature range of -55°C to 150°C.