AO4435

$0.20

Description：P
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:6e967393e84e Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：P
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：10.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V, 20V
Rds On (Max) @ Id, Vgs：14mOhm @ 11A, 20V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：24 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：1400 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

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AO4435

Overview

The AO4435 is a 30V P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and ultra-low gate charge with a 25V gate rating. The device features a maximum drain-source voltage of -30V and a continuous drain current of -10.5A at 25°C. On-resistance values are less than 18mΩ at VGS=-10V and less than 36mΩ at VGS=-5V. It operates within a junction temperature range of -55°C to 150°C and is housed in an SOIC-8 package.

Feature Summary

Advanced trench technology provides excellent RDS(ON) performance.
Ultra-low gate charge supports efficient switching applications.
Rated for 100% Unclamped Inductive Switching (UIS) testing.
Suitable for use as a load switch or in PWM applications.

Applications

Load switching circuits
Pulse Width Modulation (PWM) applications

Procurement Notes

Verify the specific manufacturer lot, as multiple vendors produce this part number. Confirm RoHS compliance status and Halogen-free certification requirements against your project specifications. Ensure the package matches the SOIC-8 footprint and pinout configuration provided in the official datasheet before finalizing procurement orders.

Selection Notes

Select this component for low-voltage power management requiring high efficiency. The low gate charge reduces driver losses during switching transitions. Verify that the application's thermal environment allows for the specified steady-state power dissipation limits. Ensure the gate drive voltage meets the minimum thresholds for the required on-resistance levels.

Part Context

This component belongs to the family of 30V P-Channel MOSFETs designed for consumer electronics and general-purpose power switching. Alpha & Omega Semiconductor manufactures this device using standard silicon processes optimized for cost-effective volume production in surface-mount packages.

Replacement Considerations

Check for direct substitutes such as TSM4435 from Taiwan Semiconductor. Verify pin compatibility and electrical parameters like RDS(ON) and VGS(th) before swapping manufacturers.