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The AO4441 is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver excellent on-resistance and ultra-low gate charge, making it suitable for load switch and PWM applications. The device features a drain-source voltage of -60V and a continuous drain current of -4A at VGS=-10V. On-resistance is specified as less than 100mΩ at VGS=-10V and less than 130mΩ at VGS=-4.5V. It operates within a junction temperature range of -55°C to 150°C.
Verify the specific datasheet revision and ordering suffixes with the manufacturer or authorized distributors before procurement. Confirm that the component meets RoHS and Sony 259 specifications if required by your design. Ensure the package type matches your PCB footprint requirements. Check for any recent product specification changes directly from Alpha & Omega Semiconductor.
Select this component when a P-Channel MOSFET with a -60V rating and -4A continuous current capability is needed. Consider its low gate charge for high-frequency switching efficiency. Evaluate thermal management needs based on the junction-to-ambient thermal resistance values provided in the datasheet for your specific board layout.
This part belongs to the Alpha & Omega Semiconductor lineup of P-Channel Enhancement Mode Field Effect Transistors. These devices are engineered for power switching applications requiring reliable performance and low conduction losses. The AO4441 specifically targets designs needing robust voltage handling and fast switching characteristics in a compact surface-mount package.
AO4441L is electrically identical to the standard AO4441 and serves as a green product ordering option.
The maximum gate-source voltage is ±20V.
Yes, the standard AO4441 is Pb-free and meets ROHS specifications.