AO4448

Overview

The AO4448 is an N-Channel MOSFET fabricated using SDMOSTM trench technology, offering a drain-source voltage of 80V and a continuous drain current of 10A at VGS=10V. It achieves a maximum on-resistance of less than 16mΩ at VGS=10V and 20mΩ at VGS=7V. The device features low gate charge and low reverse recovery charge (Qrr), ensuring high efficiency and controlled switching behavior. It is designed for PWM, load switching, and general-purpose applications.

Feature Summary

• SDMOSTM trench technology integration
• Low gate charge and Qrr characteristics
• High efficiency with controlled switching

Applications

• PWM applications
• Load switching
• General purpose applications

Procurement Notes

Verify the specific manufacturer datasheet to confirm exact electrical tolerances and thermal resistance values. Ensure the selected variant matches the required package type and lead-free status. Cross-reference official documentation for any recent product change notices or environmental compliance updates before finalizing procurement.

Selection Notes

Select this component when an 80V rating and 10A current capacity are required in a compact surface-mount package. The low RDS(ON) and optimized gate charge make it suitable for efficient power management circuits where switching losses must be minimized. Verify compatibility with the intended drive voltage levels.

Part Context

This part belongs to Alpha & Omega Semiconductor's portfolio of trench MOSFETs. It utilizes proprietary SDMOSTM technology to balance conduction losses and switching performance. The device is commonly used in consumer electronics and industrial power supplies requiring reliable N-channel switching capabilities.

Replacement Considerations

AO4448L is an electrically identical green product option from the same manufacturer.