ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET P-CH 30V 7A 8SOIC
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：34mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：910 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
Download product information
Overview
The AO4449 is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge. Key electrical parameters include a Drain-Source Voltage (Vdss) of -30 V, a continuous Drain Current (Id) of -7 A at 25°C ambient temperature, and a maximum power dissipation of 3.1 W. The device features a typical Rds(on) of 34 mΩ at Vgs = -10 V and Id = -7 A. It operates within a junction temperature range of -55°C to +150°C and is housed in an 8-SOIC surface-mount package.
Feature Summary
- Advanced trench technology for optimized performance
- Low on-resistance and ultra-low gate charge characteristics
- Suitable for efficient power switching applications
Applications
- Power management circuits
- Load switches
- DC-DC converter modules
Procurement Notes
Verify the specific datasheet revision and RoHS compliance status prior to procurement. Confirm that the 8-SOIC package dimensions match the target PCB footprint. Ensure thermal management strategies account for the 3.1 W power dissipation rating under expected operating conditions. Cross-reference pinout configurations with the official manufacturer documentation to prevent installation errors.
Selection Notes
Select this component when a P-channel MOSFET with a 30 V voltage rating and approximately 7 A current capacity is required. Consider the 34 mΩ on-resistance for efficiency calculations in low-voltage applications. Evaluate the 8-SOIC package constraints against available board space. Compare gate charge specifications against driver capabilities to ensure adequate switching speeds.
Part Context
Alpha & Omega Semiconductor produces discrete power devices and power management ICs. The AO4449 belongs to their portfolio of trench MOSFETs designed for high-volume consumer and industrial electronics. These components target applications requiring efficient power conversion and compact form factors.
Replacement Considerations
Verify compatibility with alternative P-channel MOSFETs offering similar -30 V ratings and comparable Rds(on) values. Ensure substitute packages match the 8-SOIC footprint and pin configuration. Check that replacement parts meet the same thermal and electrical safety standards.
