AO4453

$0.16

Description：MOSFET P-CH 12V 9A 8SOIC
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:794b8d6017c6 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 12V 9A 8SOIC
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：19mOhm @ 9A, 4.5V
Vgs(th) (Max) @ Id：900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：1370 pF @ 6 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

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AO4453

Overview

The AO4453 is a P-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., housed in an SOIC-8 package. It features a drain-source voltage (VDS) of -12 V and a continuous drain current (ID) of -9 A at VGS = -4.5 V. The device exhibits extremely low on-resistance, with RDS(ON) values less than 19 mΩ at VGS = -4.5 V, 22 mΩ at -3.3 V, 26 mΩ at -2.5 V, 36 mΩ at -1.8 V, and 50 mΩ at -1.5 V. It supports a maximum junction temperature range from -55°C to 150°C.

Feature Summary

Advanced trench MOSFET technology combined with a low resistance package for optimized performance
Extremely low on-resistance across various gate-source voltage levels
Validated reliability through 100% Unclamped Inductive Switching (UIS) testing
Verified gate resistance via 100% Rg testing

Applications

Load switch circuits
Battery protection systems

Procurement Notes

Verify the specific part number against official Alpha & Omega Semiconductor documentation to confirm exact electrical parameters and package dimensions. Ensure compliance with RoHS standards and check for any recent datasheet revisions that may affect thermal or switching characteristics before finalizing procurement specifications.

Selection Notes

Select this component for applications requiring efficient power management with low voltage ratings. Consider the specific gate drive voltage available in your circuit, as on-resistance varies significantly between -1.5 V and -4.5 V. Evaluate thermal dissipation requirements based on the junction-to-ambient resistance provided in the datasheet.

Part Context

This component belongs to the discrete semiconductor category, specifically within single FETs and MOSFETs. It utilizes Metal Oxide Semiconductor Field Effect Transistor (MOSFET) technology designed for surface mount installation. The SOIC-8 package facilitates integration into compact electronic designs requiring reliable switching capabilities.