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The AO4456 is a 30V N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc. utilizing advanced trench technology with a monolithically integrated Schottky diode. It provides excellent RDS(ON) and low gate charge, suitable for use as a low side FET in SMPS, load switching, and general purpose applications. Key electrical parameters include a drain-source voltage (VDS) of 30V, continuous drain current (ID) of 20A at VGS=10V, and maximum on-resistance (RDS(ON)) of less than 4.6mΩ at VGS=10V and 5.6mΩ at VGS=4.5V. The device features a SOIC-8 package with a junction temperature range of -55°C to 150°C.
Verify the component authenticity through official manufacturer channels or authorized distributors. Confirm the part number matches the specific datasheet revision and package type. Ensure compliance with RoHS standards and check for any lifecycle status changes before procurement.
Select this component for applications requiring high current handling up to 20A with low on-resistance. Consider the thermal characteristics and package limitations for heat dissipation. Evaluate the gate charge requirements against the driving circuit capabilities to ensure efficient switching performance.
The AO4456 belongs to the family of power MOSFETs designed for efficient power management. It is part of Alpha & Omega Semiconductor's portfolio focusing on high-performance discrete semiconductors for various electronic systems.
Consult official substitution guides from Alpha & Omega Semiconductor for verified equivalent parts. Ensure replacement components match the electrical specifications and package dimensions.
The maximum continuous drain current is 20A at VGS=10V.
Yes, it features a monolithically integrated Schottky diode.