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Product Detailed Parameters
- Description：SOP-8 MOSFETS ROHS
- Series：UMW
- Mfr：UMW
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：6.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：42mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：520 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOP
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The AO4459 is a P-Channel MOSFET manufactured by UMW, utilizing advanced trench technology to achieve extremely low on-resistance. It features a drain-source voltage of -30V and a continuous drain current of -6.5A at 25°C. The device offers an on-resistance of less than 42mΩ at VGS=-10V and 56mΩ at VGS=-4.5V. Key electrical parameters include a gate threshold voltage ranging from -1V to -2.5V, input capacitance of 520pF, and total gate charge of 11nC at VGS=-10V. Thermal characteristics specify a maximum junction temperature of 150°C and power dissipation of 3.1W.
Feature Summary
- Advanced trench MOSFET technology for low resistance
- Suitable for load switch applications
- Designed for battery protection circuits
Applications
- Load switch
- Battery protection
- Uninterruptible power supply
Procurement Notes
Verify the component against official UMW datasheets to confirm specifications such as RDS(ON) limits and thermal ratings. Ensure the package type matches SOP-8 requirements. Check RoHS compliance status and active lifecycle status before procurement. Confirm that ordering suffixes do not alter functional parameters unless explicitly documented by the manufacturer.
Selection Notes
Select this component for designs requiring efficient switching in low-voltage environments. Consider the gate threshold voltage range when designing drive circuits. Evaluate thermal management needs based on the specified power dissipation and junction-to-ambient resistance. Verify compatibility with system voltage levels and current demands.
Part Context
The AO4459 belongs to the P-Channel MOSFET category produced by UMW Semiconductor. It is designed for surface-mount applications using the SOP-8 package. The device integrates trench technology to optimize performance for modern electronic systems requiring reliable power management solutions.
Replacement Considerations
Check for direct substitutes within the UMW portfolio or industry-standard equivalents. Verify pinout compatibility and electrical parameter alignment. Ensure replacement parts meet the same thermal and voltage requirements.
