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Product Detailed Parameters
- Description：MOSFET P-CH 30V 6.5A 8SO
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：6.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：46mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：830 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The AO4459L is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench MOSFET technology to achieve low on-resistance and gate charge within an SOIC-8 package. The device supports a drain-source voltage of -30V and a continuous drain current of -6.5A at VGS=-10V. Key electrical parameters include an on-resistance below 46mΩ at VGS=-10V and below 72mΩ at VGS=-4.5V. It features a junction temperature range from -55°C to 150°C, maximum power dissipation of 3.1W, and is fully tested for unclamped inductive switching (UIS) and gate resistance.
Feature Summary
- Advanced trench MOSFET technology provides extremely low on-resistance and reduced gate charge.
- Fully tested for unclamped inductive switching (UIS) reliability and gate resistance consistency.
- Designed with a low resistance package suitable for efficient load switching operations.
Applications
- Load switch applications
- Battery protection circuits
Procurement Notes
Verify the specific AO4459L suffix against official Alpha & Omega Semiconductor documentation to confirm it represents the Green Product ordering option while maintaining electrical identity with the standard AO4459. Ensure compliance with RoHS and Sony 259 specifications as stated in the datasheet. Confirm that the component meets the required environmental standards for your intended deployment before finalizing procurement.
Selection Notes
Select this component when designing circuits requiring a P-channel MOSFET with a -30V rating and moderate current handling capabilities around 6.5A. The low on-resistance characteristics make it suitable for minimizing conduction losses in battery-powered systems. Consider the thermal performance and package constraints of the SOIC-8 form factor during layout planning to ensure adequate heat dissipation within the specified operating temperature range.
Part Context
The AO4459L belongs to the family of P-Channel Enhancement Mode Field Effect Transistors produced by Alpha & Omega Semiconductor. It shares identical electrical specifications with the standard AO4459 model, differing only in its specific ordering suffix designation which indicates a Green Product configuration. This part is designed to offer high performance in compact surface-mount packages for modern electronic designs.
Replacement Considerations
The AO4459L is electrically identical to the AO4459 according to manufacturer documentation. No other substitute part numbers are confirmed in the provided source material.
