AO4485

Overview

The AO4485 is a P-Channel Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to achieve low gate charge and excellent on-resistance, making it suitable for DC-DC converter applications. The device features a drain-source voltage of -40V and a continuous drain current of -10A at 25°C. Key electrical parameters include an on-resistance of less than 15mΩ at VGS=-10V and less than 20mΩ at VGS=-4.5V. It operates within a junction temperature range of -55°C to 150°C and is housed in an 8-SOIC surface-mount package.

Feature Summary

• Advanced trench technology provides excellent RDS(ON) with low gate charge
• Designed for use as a DC-DC converter application
• P-Channel Enhancement Mode Field Effect Transistor

Applications

• DC-DC converter applications

Procurement Notes

Verify the manufacturer source carefully, as documentation indicates distribution by UTD Semiconductor Co., Limited alongside Alpha & Omega Semiconductor Inc. Confirm RoHS compliance status and ensure the component meets consumer market qualification standards. Check for specific ordering suffixes or delivery modes such as tape and reel quantities if required for production integration.

Selection Notes

Select this component for designs requiring a P-Channel MOSFET with a -40V rating and -10A continuous current capability. Consider the thermal resistance characteristics and the requirement for adequate board design, as the junction-to-ambient thermal resistance depends on the user's specific FR-4 board layout and copper weight.

Part Context

The AO4485 belongs to the P-Channel MOSFET category from Alpha & Omega Semiconductor Inc. It is part of a series utilizing trench technology for improved performance metrics compared to standard planar devices. The component is designed for consumer market applications and is available in an 8-SOIC package.

Replacement Considerations

AO4485L is electrically identical to the AO4485.