AO4488L

Description：MOSFET N-CH 30V 15A 8SO
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Bulk

SKU:f615d17abe7b Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 15A 8SO
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：15A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：112 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6800 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.7W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

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AO4488L

Overview

The AO4488L is a 30V N-Channel MOSFET from Alpha & Omega Semiconductor, packaged in an SOIC-8. It utilizes advanced trench technology to achieve low on-resistance and gate charge. Key electrical parameters include a drain-source breakdown voltage of 30V, a continuous drain current of 20A at VGS=10V, and a maximum static drain-source on-resistance of 6.4mΩ at VGS=4.5V. The device features ESD protection and is rated for junction temperatures up to 150°C.

Feature Summary

Advanced trench technology provides excellent on-resistance with low gate charge.
ESD protected design suitable for load switching applications.
100% UIS tested for reliability in inductive switching environments.

Applications

Load switching
PWM applications

Procurement Notes

Verify the specific ordering suffix 'L' against the manufacturer's datasheet to confirm it denotes a Green Product option without altering electrical characteristics. Confirm package type matches SOIC-8 requirements. Ensure component availability aligns with project timelines as manufacturing status may vary.

Selection Notes

Select this component for low-voltage applications requiring high efficiency and fast switching speeds. Consider the thermal resistance ratings when designing heat dissipation strategies. Verify that the gate drive voltage meets the minimum threshold for optimal RDS(ON) performance.

Part Context

This part belongs to the AO4488 series of N-Channel Enhancement Mode Field Effect Transistors manufactured by Alpha & Omega Semiconductor. The 'L' suffix typically indicates a lead-free or environmentally compliant variant within the product line.

Replacement Considerations

Direct substitutes must match the 30V N-Channel specification, SOIC-8 package, and comparable RDS(ON) and ID ratings. Verify pinout compatibility and thermal characteristics before implementation.