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Product Detailed Parameters
- Description：MOSFET N-CH 30V 13A 8SOIC
- Series：SRFET™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：13A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：14.5mOhm @ 11.2A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：31 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：1885 pF @ 15 V
- FET Feature：Schottky Diode (Body)
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The AO4712 is a surface-mount P-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor. It features a drain-source voltage rating of 30 V and supports continuous drain currents of 12 A at ambient temperature and 20 A at case temperature. The device utilizes an 8-DFN (5x6 mm) package with exposed thermal pad, offering a maximum power dissipation of 5 W at ambient conditions and 24.5 W at case conditions. Key electrical characteristics include a gate threshold voltage of up to 2.3 V at 250 µA and a maximum gate charge of 34 nC at 10 V.
Feature Summary
- P-channel MOSFET technology for high-side switching applications
- Surface mount construction in an 8-DFN package with exposed pad for thermal management
- Enhancement mode operation with low gate threshold voltage
Applications
- DC-DC converter circuits
- Power management modules
- Load switch applications
Procurement Notes
Verify the specific datasheet revision and ordering suffixes directly with Alpha & Omega Semiconductor or authorized distributors. Confirm that the component meets RoHS compliance standards required for your assembly process. Ensure proper handling procedures are followed due to the sensitivity of the semiconductor junctions during installation.
Selection Notes
Select this component when a 30 V P-channel MOSFET is required in a compact 8-DFN footprint. Evaluate the thermal resistance capabilities provided by the exposed pad design against your system's heat dissipation requirements. Compare the on-resistance and gate charge specifications against alternative devices to ensure compatibility with your driver circuitry.
Part Context
This part belongs to the Alpha & Omega Semiconductor discrete MOSFET portfolio, which focuses on power management solutions. The manufacturer specializes in designing and manufacturing integrated circuits and discrete semiconductors for various electronic applications. This specific model represents their surface-mount offerings designed for efficient power control in modern electronics.
Replacement Considerations
Consult official substitution guides from Alpha & Omega Semiconductor for verified equivalents. Cross-reference pinouts, voltage ratings, and package dimensions before replacing the component. Do not assume functional interchangeability with other P-channel MOSFETs without verifying all electrical parameters.
