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The AO4771L is a P-Channel MOSFET with an integrated Schottky diode, utilizing advanced trench technology for low on-resistance and gate charge. It features a drain-source voltage of -30V and a continuous drain current of -4A at VGS=-10V. The on-resistance is less than 68mΩ at VGS=-10V and 105mΩ at VGS=-4.5V. The integrated Schottky diode supports a reverse voltage of 30V and a forward current of 4A. Operating temperature ranges from -55°C to 150°C.
Verify the component status as this product may be designated for the consumer market only. Confirm that the application does not involve life support devices or systems, as such uses are explicitly unauthorized by the manufacturer. Ensure compliance with RoHS3 specifications and check for any recent Product Change Notifications regarding subcontractor name changes before finalizing procurement plans.
Select the AO4771L when a compact solution combining a P-Channel MOSFET and a Schottky diode is required. Consider its low thermal resistance and high current capability for power management tasks. Evaluate the gate charge characteristics against switching frequency requirements. Ensure the operating environment stays within the specified junction temperature limits for reliable performance.
Alpha & Omega Semiconductor designs power semiconductors integrating discrete and IC process technologies. The AO4771L belongs to their portfolio of power management solutions, leveraging trench technology to enhance efficiency. This component represents a specialized integration aimed at simplifying circuit designs for specific power conversion needs.
SI4485DY-T1-GE3 is listed as a direct substitute part number.
The maximum continuous forward current (IF) of the integrated Schottky diode is 4A at TA=25°C.
The device integrates a Schottky diode alongside the P-Channel MOSFET, which allows it to function effectively as a bidirectional blocking switch in circuit designs.