AO4822

Description：MOSFET 2N-CH 30V 8A 8SOIC
Series：-

SKU:fa9cd56a8058 Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 8A 8SOIC
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：8A
Rds On (Max) @ Id, Vgs：19mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：888pF @ 15V
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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AO4822

Overview

The AO4822 is a dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to achieve low on-resistance and gate charge. The device operates with a drain-source voltage of 30V and supports a continuous drain current of 8A at VGS=10V. Maximum on-state resistance is less than 19mΩ at VGS=10V and 26mΩ at VGS=4.5V. It is housed in an SOIC-8 package, features ESD protection, and has been subjected to 100% UIS and Rg testing.

Feature Summary

Advanced trench technology for excellent on-resistance and low gate charge
Suitable for load switch and PWM applications
ESD protected structure
100% Unclamped Inductive Switching (UIS) tested

Applications

Load switching circuits
Pulse Width Modulation (PWM) applications

Procurement Notes

Verify the specific datasheet revision and manufacturing date code upon procurement. Confirm that the received components match the SOIC-8 physical dimensions and pinout configuration. Ensure compliance with applicable export control regulations and legal requirements before finalizing any purchase or integration into end-use products.

Selection Notes

Select this component when a dual N-channel MOSFET with a 30V rating and 8A continuous current capability is required. Consider the thermal characteristics and junction-to-ambient resistance values provided in the datasheet for heat dissipation planning. Evaluate the gate charge parameters against the driving circuit capabilities to ensure efficient switching performance.

Part Context

The AO4822 belongs to the AO48xx series of dual N-channel enhancement mode field effect transistors from Alpha & Omega Semiconductor. These devices are designed using trench technology to provide superior electrical performance compared to standard planar technologies. The part number identifies a specific voltage and current rating within this family.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the verified source material. Cross-referencing with other manufacturers requires independent verification of absolute maximum ratings, thermal characteristics, and electrical parameters to ensure functional compatibility.