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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 8SOIC
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：56mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：540pF @ 30V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The AO4828 is a dual N-channel enhancement mode MOSFET manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to achieve low on-resistance and gate charge, making it suitable for load switching and PWM applications. The device features a drain-source voltage of 60V and a continuous drain current of 4.5A at VGS=10V. Maximum on-resistance is 56mΩ at VGS=10V and 77mΩ at VGS=4.5V. Total gate charge is 10.5nC at VGS=10V. The component operates within a junction temperature range of -55°C to 150°C and is housed in an SOIC-8 package.
Feature Summary
- Advanced trench technology provides excellent RDS(ON) performance and low gate charge characteristics.
- Validated for 100% UIS (Unclamped Inductive Switching) testing to ensure robustness under inductive loads.
- Designed specifically for efficient operation as a load switch or in pulse-width modulation (PWM) circuits.
Applications
- Load switching
- Pulse-width modulation (PWM) applications
Procurement Notes
Verify the specific datasheet revision against the manufacturer's official documentation before finalizing designs. Confirm that the intended operating conditions remain within the absolute maximum ratings provided in the latest release. Ensure compliance with all applicable export control rules and regulations during acquisition.
Selection Notes
Select this component when a dual N-channel configuration is required for space-constrained designs using the SOIC-8 footprint. Evaluate thermal management requirements carefully, as steady-state power dissipation drops significantly from 2W at 25°C ambient to 1.28W at 70°C ambient. Verify that the logic level drive capability meets the system's gate voltage constraints.
Part Context
This part belongs to the AO48xx series of dual N-channel MOSFETs produced by Alpha & Omega Semiconductor Inc. The series focuses on providing high-performance switching solutions in compact surface-mount packages. The AO4828 specifically targets applications requiring moderate voltage handling with optimized switching speeds.
Replacement Considerations
No public confirmed substitute part numbers are available in the verified source material.
FAQ
What is the maximum continuous drain current rating?
The maximum continuous drain current is 4.5A when measured at a gate-source voltage of 10V.
Is the device tested for unclamped inductive switching?
Yes, the datasheet confirms that the AO4828 undergoes 100% UIS testing.
What is the typical total gate charge at 10V?
The typical total gate charge (Qg) at VGS=10V is 10.5nC.
