AO4830

Description：MOSFET 2N-CH 80V 3.5A 8SOIC
Series：-

SKU:e6f8bddb9a77 Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 80V 3.5A 8SOIC
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：80V
Current - Continuous Drain (Id) @ 25°C：3.5A
Rds On (Max) @ Id, Vgs：75mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：770pF @ 40V
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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AO4830

Overview

The AO4830 is a dual N-channel enhancement mode MOSFET manufactured by Alpha & Omega Semiconductor. It utilizes advanced trench technology to deliver low on-resistance and gate charge. The device features a drain-source voltage of 80V and a continuous drain current of 3.5A at 25°C. Key electrical parameters include a maximum on-resistance of 100 milliohms at 10V gate drive, a typical gate charge of 9nC, and an input capacitance of 450pF. It operates within a junction temperature range of -55°C to 150°C and is housed in an 8-SOIC surface-mount package with a maximum power dissipation of 2W.

Feature Summary

Dual N-channel configuration for space-efficient circuit design
Advanced trench technology ensures low on-resistance and fast switching performance
Logic-level compatible gate drive characteristics

Applications

DC-DC converter circuits
Motor control applications
Power management systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct pinout and electrical specifications. Confirm component status as active or obsolete prior to procurement. Ensure compliance with RoHS and REACH directives if required by the application environment. Cross-reference the supplier's documentation with the original Alpha & Omega Semiconductor data sheet for accuracy.

Selection Notes

Select this component for applications requiring dual N-channel MOSFETs with an 80V breakdown voltage. Consider the 3.5A continuous current rating and 100 milliohm on-resistance for efficiency requirements. Evaluate the 8-SOIC package constraints for thermal management and PCB layout. Compare gate charge specifications against switching frequency needs to optimize driver performance.

Part Context

The AO4830 belongs to the AOSMD product line from Alpha & Omega Semiconductor. It is part of a series of dual MOSFET arrays designed for compact power solutions. The component leverages trench technology to improve performance metrics compared to standard planar devices. It serves as a discrete solution for integrated power stages in consumer and industrial electronics.